午夜电影第一页_ ╔有腿没裤子 ╗-澧县二中
淘宝减肥药排行榜十强
只推淘宝安全有效的减肥药

当前位置:午夜电影第一页 > 减肥产品

午夜电影第一页

时间:2020-06-22 00:26  编辑:wendj

©2001 Fairchild Semiconductor Corporation

www.fairchildsemi.com

Rev.1.0.2

Features

•Precision fixed operating frequency

•KA1M0565R (67KHz),KA1H0565R (100KHz)•Pulse by pulse over current limiting •Over load protection

•Over voltage protection (Min. 23V) •Internal thermal shutdown function •Under voltage lockout

•Internal high voltage sense FET •

Auto restart

Description

The Fairchild Power Switch(FPS) product family is specially

designed for an off-line SMPS with minimal external

components. The Fairchild Power Switch(FPS) consist of high voltage power SenseFET and current mode PWM controller IC. PWM controller features integrated fixed

oscillator, under voltage lock out, leading edge blanking,optimized gate turn-on/turn-off driver, thermal shut down protection, over voltage protection, temperature compensated precision current sources for loop compensation and fault protection circuit. compared to discrete MOSFET and

controller or R CC switching converter solution, a Fairchild Power Switch(FPS) can reduce total component count,design size, weight and at the same time increase &

efficiency, productivity, and system reliability. It has a basic platform well suited for cost effective design in either a flyback converter or a forward converter.

TO-220F-4L

1. GND

2. DRAIN

3. V CC

4. FB

1

Internal Block Diagram

#3 V CC

32V

5µA

9V

2.5R

1R 1mA 0.1V

+

−OVER VOLTAGE S/D

+

7.5V

25V

Thermal S/D S R Q

Power on reset

+

−L.E.B S R Q

OSC

5V Vref

Internal bias

Good logic

SFET

#2 DRAIN

#1 GND

#4 FB

KA1M0565R/KA1H0565R

Fairchild Power Switch(FPS)

KA1M0565R/KA1H0565R

2

Absolute Maximum Ratings

Notes:

1.Tj=25°C to 150°C

2.Repetitive rating: Pulse width limited by maximum junction temperature

3.L=30mH, V DD =50V, R G = 27Ω, starting Tj=25°C

Parameter

Symbol Value Unit Maximum Drain voltage (1)V D,MAX 650V Drain Gate voltage (R GS =1M Ω)V DGR 650V Gate-source (GND) voltage V GS ±30V Drain current pulsed (2)

I DM 20A DC Single pulsed avalanche energy (3)E AS 230mJ Continuous drain current (T C =25°C)I D 5.0A DC Continuous drain current (T C =100°C)I D 3.5A DC Maximum Supply voltage V CC,MAX 30V Input voltage range V FB −0.3 to V SD

V Total power dissipation P D 140W Derating 1.11W/°C Operating ambient temperature T A −25 to +85°C Storage temperature

T STG

−55 to +150

°C

KA1M0565R/KA1H0565R

3

Electrical Characteristics (SFET part)

(Ta=25°C unless otherwise specified)Note:

Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2%

Parameter

Symbol Condition

Min.Typ.Max.Unit Drain source breakdown voltage

BV DSS V GS =0V, I D =50µA 650--V Zero gate voltage drain current I DSS V DS =Max., Rating, V GS =0V

--50µA V DS =0.8Max., Rating,V GS =0V, T C =125°C --200µA

Static drain source on resistance (note)R DS(ON)V GS =10V, I D =2.5A - 1.76 2.2Ω

Forward transconductance (note)gfs V DS =50V, I D =2.5A 2.5--S

Input capacitance Ciss V GS =0V, V DS =25V,f=1MHz

-1457-pF Output capacitance

Coss -130-Reverse transfer capacitance Crss -38.8-Turn on delay time t d(on)V DD =0.5BV DSS , I D =5.0A (MOSFET switching time are essentially independent of

operating temperature)--60nS Rise time

tr --150Turn off delay time t d(off)--300Fall time

tf --130Total gate charge

(gate-source+gate-drain)Qg V GS =10V, I D =5.0A,

V DS =0.5BV DSS (MOSFET switching time are

essentially independent of operating temperature)

--56nC Gate source charge Qgs -10.3-Gate drain (Miller) charge

Qgd

-22.3

-S 1R

---=

KA1M0565R/KA1H0565R

4

Electrical Characteristics (CONTROL part)

(Ta=25°C unless otherwise specified)Note:

1.These parameters, although guaranteed, are not 100% tested in production

2.These parameters, although guaranteed, are tested in EDS (wafer test) process

Parameter Symbol

Condition

Min.

Typ.

Max.

Unit

UVLO SECTION Start threshold voltage V START -141516V Stop threshold voltage V STOP

After turn on

9

10

11

V

OSCILLATOR SECTION Initial accuracy

F OSC KA1M0565R 616773kHz KA1H0565R 90100110Frequency change with temperature (2)∆F/∆T −25°C ≤ Ta ≤ +85°C -±5±10%Maximum duty cycle Dmax

KA1M0565R 747780%

KA1H0565R

64

67

70

FEEDBACK SECTION Feedback source current I FB Ta=25°C, 0V ≤ Vfb ≤ 3V

0.70.9 1.1mA Shutdown Feedback voltage V SD - 6.97.58.1V Shutdown delay current I delay

Ta=25°C, 5V ≤ Vfb ≤ V SD

4.0

5.0

6.0

µA

REFERENCE SECTION Output voltage (1)

Vref Ta=25°C

4.80

5.00 5.20V Temperature Stability (1)(2)Vref/∆T −25°C ≤ Ta ≤ +85°C -0.30.6mV/°C CURRENT LIMIT (SELF-PROTECTION) SECTION

Peak Current Limit I OVER

Max. inductor current

3.08

3.5

3.92

A

PROTECTION SECTION

Thermal shutdown temperature (Tj) (1)T SD -140160-°C Over voltage protection voltage V OVP

-23

25

28

V

TOTAL DEVICE SECTION Start Up current I START V CC =14V 0.10.30.4mA Operating supply current (control part only)I OP Ta=25°C 61218mA V CC zener voltage

V Z

I CC =20mA

30

32.5

35

V

KA1M0565R/KA1H0565R

Typical Performance Characteristics

(These characteristic graphs are normalized at Ta=25°C)

Figure 5. Start up Current Figure 6. Start Threshold Voltage

5

KA1M0565R/KA1H0565R

Typical Performance Characteristics (Continued)

(These characteristic graphs are normalized at Ta=25°C)

Figure 11. Shutdown Delay Current Figure 12. Over Voltage Protection 6

KA1M0565R/KA1H0565R

Typical Performance Characteristics(Continued)

(These characteristic grahps are normalized at Ta=25°C)

Figure 13. Static Drain-Source on Resistance

7

KA1M0565R/KA1H0565R Package Dimensions

8

KA1M0565R/KA1H0565R

9

Package Dimensions

(Continued)

TO-220F-4L(Forming)

KA1M0565R/KA1H0565R

11/23/01 0.0m 001Stock#DSxxxxxxxx

2001 Fairchild Semiconductor Corporation

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:

1.Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be

reasonably expected to result in a significant injury of the user.

2. A critical component in any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

www.fairchildsemi.com

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

Ordering Information

TU : Non Forming Type YDTU : Forming Type

Product Number Package Rating Fosc KA1M0565R-TU TO-220F-4L 650V, 5A 67kHz KA1M0565R-YDTU TO-220F-4L(Forming)

KA1H0565R-TU TO-220F-4L 650V, 5A

100kHz

KA1H0565R-YDTU

TO-220F-4L(Forming)

猜你喜欢

最安全有效的减肥药

最安全有效的减肥药

编辑:小徐

现在的减肥药真的是真假难分,在选择减肥药的同时也应该更加小心,减肥药多种多样,那么如何才能选择最安全有效的减肥药,也成了很多小仙女的内心疑问,下面就跟着午夜电影第一页小编一起看一下,如何选择最安全有效的减肥药。 最安全有效的减肥药选购方法 1、首先需要观察产品的外包装,在包装中可以看到其配方是不是含有激素,含有激素的减肥药对身体的内..

吃减肥药失眠

吃减肥药失眠

编辑:小徐

随着现在流行以瘦为美,很多人会不顾身体的健康选择减肥药,达到快速减肥瘦身的效果,但是很多减肥药都是有副作用的,副作用比较轻的就是失眠现象,那么吃减肥药出现失眠是怎么回事儿?如果出现失眠后,我们应该怎样缓解? 吃减肥药失眠是怎么回事 减肥药中富含安非他命,所以减肥药服用了太多会有失眠现象,服用减肥药期间,身体会逐渐出现抗药性,身..

最新文章